power transistors 1 2sd2139 2sd2139 2sd2139 2sd2139 2sd2139 silicon npn triple diffusion planar type for high-current amplification ratio, power amplification features ? high forward current transfer ratio h fe ? satisfactory linearity of forward current transfer ratio h fe ? allowing supply with the radial taping absolute maximum ratings t c = 25 c 1: base 2: collector 3: emitter mt-4 (mt4 type package) unit: mm electrical characteristics t c = 25 c parameter symbol rating unit collector to base voltage v cbo 80 v collector to emitter voltage v ceo 60 v emitter to base voltage v ebo 6v peak collector current i cp 6a collector current i c 3a base current i b 1a collector power t c = 25 cp c 15 w dissipation t a = 25 c2 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = 80 v, i e = 0 100 a i ceo v ce = 40 v, i b = 0 100 a emitter cutoff current i ebo v eb = 6 v, i c = 0 100 a collector to emitter voltage v ceo i c = 25 ma, i b = 0 60 v forward current transfer ratio * h fe v ce = 4 v, i c = 0.5 a 500 2 500 collector to emitter saturation voltage v ce(sat) i c = 2 a, i b = 0.05 a 1 v transition frequency f t v ce = 12 v, i c = 0.2 a, f = 10 mhz 50 mhz note) * : rank classification rank q p o h fe 500 to 1 000 800 to 1 500 1 200 to 2 500 10.0 ?.2 0.65 ?.1 0.35 ?.1 2.5 ?.2 123 0.65 ?.1 1.2 ?.1 1.48 ?.2 2.25 ?.2 c 1.0 0.55 ?.1 0.55 ?.1 2.5 ?.2 1.05 ?.1 13.0 ?.2 4.2 ?.2 18.0 ?.5 solder dip 5.0 ?.1 2.5 ?.1 90? 1.0 ?.2
power transistors 2 2sd2139 v ce(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce i c ? v be c ob ? v cb area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 20 15 5 10 (1) t c =ta (2) without heat sink (p c =2.0w) (1) (2) ambient temperature t a ( ? c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 1.2 1.0 0.8 0.6 0.4 0.2 t c =25 ? c i b =1.6ma 1.4ma 1.2ma 1.0ma 0.8ma 0.6ma 0.4ma 0.2ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0 2.0 1.6 0.4 1.2 0.8 0 6 5 4 3 2 1 v ce =4v t c =100 ? c 25 ? c 25 ? c base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =40 t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 10 10000 1000 100 30 300 3000 v ce =4v 25 ? c 25 ? c t c =100 ? c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 1 1000 100 10 3 30 300 v ce =12v f=10mhz t c =25 ? c collector current i c ( a ) transition frequency f t ( mhz ) 1 3 10 30 100 1 1000 100 10 3 30 300 i e =0 f=1mhz t c =25 ? c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25 ? c t=10ms 1ms dc i cp i c collector to emitter voltage v ce ( v ) collector current i c ( a )
power transistors 3 2sd2139 r th(t) ? t 10 4 10 10 3 10 1 10 2 110 3 10 2 10 4 0.1 1 10 100 10000 1000 note: r th was measured at ta=25 ? c and under natural convection. (1) without heat sink (2) with a 50 50 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ? c/w )
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